Addressed to circuit designers, with an in-depth treatment that appeals to device specialists, this book presents a fresh view of compact modeling. It overviews the basic physics theory required to build compact MOSFET models, and offers a unified treatment of inversion-charge and surface- potential models. The needs of digital, analog, and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis and for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived. The modeling of fluctuations is strongly emphasized, and a unified approach for both space (matching) and time (noise) fluctuations is introduced. The authors are affiliated with Federal University of Santa Catarina, Brazil. Annotation ©2008 Book News, Inc., Portland, OR (booknews.com)